2004. 1. 29 1/2 semiconductor technical data KDS114E silicon epitaxial planar diode revision no : 1 vhf tuner band switch applications. features small package. small total capacitance : c t =1.2pf(max.). low series resistance : r s =0.5 (typ.). maximum rating (ta=25 ) esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e 1. anode 2. cathode f 0.13 0.05 f + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) characteristic symbol rating unit reverse voltage v r 35 v forward current i f 100 ma junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit forward voltage v f i f =2ma - - 0.85 v reverse current i r v r =15v - - 0.1 a reverse voltage v r i r =1 a 35 - - v total capacitance c t v r =6v, f=1mhz - 0.7 1.2 pf series resistance r s i f =2ma, f=100mhz - 0.5 0.9 type name marking d u
2004. 1. 29 2/2 KDS114E revision no : 1 i - v f f f forward voltage v (v) 0 10 f forward current i (a) total capacitance c (pf) t 0.3 10 3 1 reverse voltage v (v) r r t c - v forward current i (ma) sf series resistance r ( ? ) 13 0.1 s 30 10 f r - i 100 0.3 0.5 1 3 ta=25 c f=100mhz 30 100 550 0.5 1 3 5 10 ta=25 c f=100mhz 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -4 10 -3 10 -2 10 -1 ta=25 c
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